MG300J1US1 Toshiba High Power IGBT Module and 50 similar items
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MG300J1US1 Toshiba High Power IGBT Module 600V 300A 1300W
$50.00
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Shipping options
Seller handling time is 1 business day Details
FREE in United States
Offer policy
OBO - Seller accepts offers on this item.
Details
Return policy
Full refund available within 30 days
Purchase protection
Payment options
PayPal accepted
PayPal Credit accepted
Venmo accepted
PayPal, MasterCard, Visa, Discover, and American Express accepted
Maestro accepted
Amazon Pay accepted
View full item details »
Shipping options
Seller handling time is 1 business day Details
FREE in United States
Offer policy
OBO - Seller accepts offers on this item.
Details
Return policy
Full refund available within 30 days
Purchase protection
Payment options
PayPal accepted
PayPal Credit accepted
Venmo accepted
PayPal, MasterCard, Visa, Discover, and American Express accepted
Maestro accepted
Amazon Pay accepted
Item traits
| Category: | |
|---|---|
| Quantity Available: |
Only one in stock, order soon |
| Condition: |
New |
| Brand: |
Generic |
| MPN: |
MG300J1US1, MG300J1US151 |
| Country/Region of Manufacture: |
Japan |
| Maximum Base-Emitter Voltage: |
-300 V |
| Maximum Collector-Emitter Saturation Voltage: |
1.0 V |
| Maximum Power Dissipation: |
300 W |
| Collector-Emitter Voltage: |
600 V |
| Maximum Collector-Base Voltage: |
600 V |
| Configuration: |
Half Bridge |
| Transistor Category: |
Power Transistor |
| Minimum Operating Temperature: |
-40 °C (-40 °F) |
| Series: |
MG |
| Type: |
IGBT |
| Maximum DC Collector Current: |
300 A |
| Packaging: |
Box |
| Maximum Operating Temperature: |
125 °C (257 °F) |
Listing details
| Shipping discount: |
Seller pays shipping for this item. |
|---|---|
| Posted for sale: |
January 5 |
| Item number: |
1709692675 |
Item description
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