IPP200N15N3G Infineon N-Ch MOSFET 150V 50A 20mOhm 150W TO-220
IPP200N15N3G Infineon N-Ch MOSFET 150V 50A 20mOhm 150W TO-220
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Specification | |
---|---|
ROHS | Yes |
Polarity/Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Terminals | 3 |
DS Breakdown Voltage-Min | 150 V |
Number of Elements | 1 |
Drain Current-Max (ID) | 50 A |
Drain-source On Resistance-Max | 20 mΩ |
Avalanche Energy Rating (Eas) | 170 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 150 W |
Pulsed Drain Current-Max (IDM) | 200 A |
Transistor Application | SWITCHING |
Packaging | TO-220-3 |
Peak Reflow Temperature (Cel) | 260 |
Terminal Form | THROUGH-HOLE |
Pin Count | 3 |