IPP200N15N3G Infineon N-Ch MOSFET 150V 50A 20mOhm 150W TO-220

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IPP200N15N3G Infineon N-Ch MOSFET 150V 50A 20mOhm 150W TO-220

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Specification
ROHS Yes
Polarity/Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Number of Terminals 3
DS Breakdown Voltage-Min 150 V
Number of Elements 1
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 20 mΩ
Avalanche Energy Rating (Eas) 170 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 200 A
Transistor Application SWITCHING
Packaging TO-220-3
Peak Reflow Temperature (Cel) 260
Terminal Form THROUGH-HOLE
Pin Count 3