1X 2SK2700 Toshiba N-Channel Power MOSFET 900V 3A 3.7Ohm 40W TO-220F
1Pcs 2SK2700 Toshiba N-Channel Power MOSFET 900V 3A 3.7Ohm 40W TO-220F
Specification | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Terminals | 3 |
DS Breakdown Voltage-Min | 900 V |
Number of Elements | 1 |
Drain Current-Max (ID) | 3 A |
Drain-source On Resistance-Max | 4.3 Ω |
Avalanche Energy Rating (Eas) | 295 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Pulsed Drain Current-Max (IDM) | 9 A |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
JESD-30 Code | R-PSFM-T3 |
Case Connection | ISOLATED |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Part Package Code | SC-67 |
Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 |
Manufacturer | Toshiba |
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