SPP21N50C3 Infineon N-Ch Power MOSFET 500V 21A 190mOhm 208W TO-220
Pack of 2Pcs SPP21N50C3 Infineon N-Ch Power MOSFET 500V 21A 190mOhm 208W TO-220
Specification | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Surface Mount | NO |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Terminals | 3 |
DS Breakdown Voltage-Min | 500 V |
Number of Elements | 1 |
Drain Current-Max (ID) | 21 A |
Drain-source On Resistance-Max | 190 mΩ |
Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 690 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation-Max (Abs) | 208 W |
Pulsed Drain Current-Max (IDM) | 63 A |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | Tin (Sn) |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 |
Manufacturer | Infineon |
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Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.