SIHP33N60EF-GE3 Vishay N-Ch Power MOSFET 600V 33A 98mOhm 278W TO-220
Pack of 2Pcs SIHP33N60EF-GE3 Vishay N-Ch Power MOSFET 600V 33A 98mOhm 278W TO-220
Specification | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Terminals | 3 |
DS Breakdown Voltage-Min | 600 V |
Number of Elements | 1 |
Drain Current-Max (ID) | 33 A |
Drain-source On Resistance-Max | 98 mΩ |
Avalanche Energy Rating (Eas) | 691 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Pulsed Drain Current-Max (IDM) | 100 A |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Manufacturer | VISHAY INTERTECHNOLOGY INC |
Package Description | FLANGE MOUNT, R-PSFM-T3 |
Shipping Policy
Our go-to options for small to medium items are USPS Ground Advantage and USPS Priority Mail, known for their reliable tracking and peace of mind.
Smaller items might qualify for USPS First Class Mail. Contact us to discuss this option before purchasing.
Note: This method is less recommended due to the potential for delays.
Return Policy
We offer a 30-day return policy, no questions asked. If you choose to provide a reason for the return, it will assist us in improving and fix the issue.
Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.