1X BU426 SGS Microelettronica High Voltage Power Switch 800V NPN Transistor 6A 113W TO-218
1 Unit of BU426 SGS Microelettronica High Voltage Power Switch 800V NPN Transistor 6A 113W TO-218
Specification | |
---|---|
Part Number | BU426 |
Package | TO-218 |
Collector Emitter Voltage VCES | 800 V |
Collector Emitter Voltage VCEO | 375 V |
Emitter Base Voltage VEBO | 10 V |
Collector Current IC | 6 A |
Collector Peak Current ICM | 8 A |
Base Current IB | 3 A |
Total Power Dissipation Ptot | 113 W |
Storage Temperature Tstg | -65 to 150 °C |
Junction Temperature Tj | 150 °C |
Thermal Resistance RthJC | 1.1 °C/W |
Collector Cutoff Current ICES | 1 mA |
Emitter Cutoff Current IEBO | 10 mA |
Collector Emitter Sustaining Voltage VCEOsus | 375 V |
Collector Emitter Saturation Voltage VCEsat | 1.5 V |
Base Emitter Saturation Voltage VBEsat | 1.4 V |
DC Current Gain hFE | 30 |
Turn On Time ton | 0.25 µs |
Storage Time ts | 2.5 µs |
Fall Time tf | 0.2 µs |
Rise Time ti | 0.4 µs |
Shipping Policy
Our go-to options for small to medium items are USPS Ground Advantage and USPS Priority Mail, known for their reliable tracking and peace of mind.
Smaller items might qualify for USPS First Class Mail. Contact us to discuss this option before purchasing.
Note: This method is less recommended due to the potential for delays.
Return Policy
We offer a 30-day return policy, no questions asked. If you choose to provide a reason for the return, it will assist us in improving and fix the issue.
Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.